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Abstract No.: ThP-160
Session: Materials Science
Presentation date: Thu, Aug 31, 2006
Presentation time: 14:30 – 16:00

Analytical Performance of Secondary Ion Mass Spectrometry for the Quality Control of Nanometric Metallized Dielectric Films for Capacitors Fabrication

Jose Miguel Vadillo1, Jose Francisco Alcantara-Leiva1, Imaculada Suarez1, Jose Javier Laserna1

1 University of Malaga, Malaga, Spain

Correspondence address: Jose Miguel Vadillo, University of Malaga, Analytical Chemistry, Faculty of Sciences, Malaga, 29071 Spain.

Keywords: Mass Spectrometry, Secondary Ion; SIMS; Solid Analysis; Surface Analysis.

Novel aspect: Analysis of metallized foils for capacitor formation.


Metallized film capacitors have become increasingly popular due to their reduced size and improved technical performance. In particular, the self-healing characteristics of the metallized film capacitors make them suitable for various applications. The metallized film capacitors are, however, susceptible to atmospheric corrosion which may strongly decrease their electrical performance. Therefore, it is of great importance to investigate how the corrosion behaviour depends on the microstructure of the metallized thin films.

In this sense, analytical techniques capable of determining the possible oxidation processes represent a must for the film and capacitor manufacturers. However, the problem to face is not trivial: a nanometric metallized layer over a very thin (around 10 microns) polymeric material. It requires a technique capable of providing good lateral resolution to determine the extension of the possible alteration, excellent surface sensitivity and depth-resolved capabilities to analyze the metallized layer all along its thickness, and minimum damage of the fragile polymeric base material. Under this premises, laser-based techniques, glow-discharge spectroscopies, or electron microprobes are ruled out as they induce non-desirable heating on the sample or does not provide the required depth resolution or surface sensitivity.
Dynamic secondary on mass spectrometry (d-SIMS) has been used as it provides layer-by-layer analysis of the metallized film with subnanometric resolution. SIMS negative ion yield is very sensitive to modifications in the oxidation state of the elements present in the surface, representing an excellent alternative to monitor possible oxidation processes. Obviously, the preservation of the oxidation state of the elements during the study is critical. For that reason, and despite of the lower ion yields, and Ar+ has been used in order to assure the surface integrity during the analysis of the metallized layer